Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2005 Vol. 227; Iss. 4
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A model for the prediction of radiation defect profiles in the semiconductor target (HgCdTe) subjected to high power short pulsed ion beams
A.V. Voitsekhovskii, A.P. Kokhanenko, S.A. Shulga, Roger SmithVolume:
227
Year:
2005
Language:
english
Pages:
14
DOI:
10.1016/j.nimb.2004.10.006
File:
PDF, 538 KB
english, 2005