Study of SiO2 surface sputtering by a 250–550 keV...

Study of SiO2 surface sputtering by a 250–550 keV He+ ion beam during high-resolution Rutherford backscattering measurements

Susumu Kusanagi, Hajime Kobayashi
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Volume:
249
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.nimb.2006.04.043
File:
PDF, 250 KB
english, 2006
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