Ultra-Low energy Ion Implantation of Si into HfO2-based...

MRS Proceedings 2009 / 1 Vol. 1160

Ultra-Low energy Ion Implantation of Si into HfO2-based layers for Non Volatile Memory Applications

Coulon, Pierre-Eugène, Chan Shin Yu, Kristel, Schamm, Sylvie, Ben Assayag, Gerard, Pécassou, Béatrice, Slaoui, Abdelilah, Bhabani, Sahu, Carrada, Marzia, Lhostis, Sandrine, Bonafos, Caroline
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Volume:
1160
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1160-H01-03
Date:
January, 2009
File:
PDF, 1.86 MB
english, 2009
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