Dependence of 4H-SiC Epitaxial Layer Quality on Growth...

MRS Proceedings 2012 / 1 Vol. 1433

Dependence of 4H-SiC Epitaxial Layer Quality on Growth Conditions with Wafer Size Corresponding to 150 mm

Kudou, Chiaki, Tamura, Kentaro, Aigo, Takashi, Ito, Wataru, Nishio, Johji, Kojima, Kazutoishi, Ohno, Toshiyuki
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Volume:
1433
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/opl.2012.1140
Date:
January, 2012
File:
PDF, 586 KB
english, 2012
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