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Ni(Pt) germanosilicide contacts formed on heavily boron doped Si 1− x Ge x substrates for Schottky source/drain transistors
Xiang, Wenfeng, Liu, Kun, Zhao, Kun, Zhong, ShouxianVolume:
34
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/34/12/123002
Date:
December, 2013
File:
PDF, 2.63 MB
english, 2013