Characterizations and formation mechanism of a new type of...

Applied Physics 2014 / 11 Vol. 117; Iss. 3

Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals

Wang, Bo, Peng, Tonghua, Liang, Jingkui, Wang, Gang, Wang, Wenjun, Zhao, Huaizhou, Chen, Xiaolong
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Volume:
117
Language:
english
Journal:
Applied Physics A
DOI:
10.1007/s00339-014-8594-x
Date:
November, 2014
File:
PDF, 1.17 MB
english, 2014
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