Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates
Mizerov, A. M., Kladko, P. N., Nikitina, E. V., Egorov, A. Yu.Volume:
49
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782615020177
Date:
February, 2015
File:
PDF, 623 KB
english, 2015