Investigating the bistability characteristics of GaN/AlN...

Japanese Journal of Applied Physics 2015 / 03 Vol. 54; Iss. 3

Investigating the bistability characteristics of GaN/AlN resonant tunneling diodes for ultrafast nonvolatile memory

Nagase, Masanori, Takahashi, Tokio, Shimizu, Mitsuaki
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Volume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.034201
Date:
March, 2015
File:
PDF, 54 KB
english, 2015
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