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High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)
Xiao-Hong Zhang, Benoit Domercq, Xudong Wang, Seunghyup Yoo, Takeshi Kondo, Zhong Lin Wang, Bernard KippelenVolume:
8
Year:
2007
Language:
english
Pages:
9
DOI:
10.1016/j.orgel.2007.06.009
File:
PDF, 902 KB
english, 2007