Band-GaP Energy and Physical Properties of InN Grown by...

MRS Proceedings 2003 / 1 Vol. 798

Band-GaP Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy

Nanishi, Yasushi, Saito, Yoshiki, Yamaguchi, Tomohiro, Matsuda, Fumie, Araki, Tsutomu, Naoi, Hiroyuki, Suzuki, Akira, Harima, Hiroshi, Miyajima, Takao
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Volume:
798
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-798-Y12.1
Date:
January, 2003
File:
PDF, 2.38 MB
english, 2003
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