![](/img/cover-not-exists.png)
Band-GaP Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy
Nanishi, Yasushi, Saito, Yoshiki, Yamaguchi, Tomohiro, Matsuda, Fumie, Araki, Tsutomu, Naoi, Hiroyuki, Suzuki, Akira, Harima, Hiroshi, Miyajima, TakaoVolume:
798
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-798-Y12.1
Date:
January, 2003
File:
PDF, 2.38 MB
english, 2003