Effect of Ge Diffusion on AlxGa1-xN/GaN High Electron...

ECS Solid State Letters 2013 / 10 Vol. 2; Iss. 12

Effect of Ge Diffusion on AlxGa1-xN/GaN High Electron Mobility Transistors on a Thin Silicon-On-Insulator

Bera, L. K., Tham, W. H., Kajen, R. S., Dolmanan, S. B., Krishna Kumar, M., Lin, V. K. X., Ang, D. S., Bhat, T. N., Yakovlev, N., Tripathy, S.
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Volume:
2
Language:
english
Journal:
ECS Solid State Letters
DOI:
10.1149/2.002312ssl
Date:
October, 2013
File:
PDF, 960 KB
english, 2013
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