Chemical-vapor-deposition growth and characterization of...

Journal of Materials Research 2001 / 1 Vol. 16; Iss. 1

Chemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers

Moon, C. K., Song, H. J., Kim, J. K., Park, J. H., Jang, S. J., Yoo, J-B., Park, H-R., Lee, Byung-Teak
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Volume:
16
Language:
english
Journal:
Journal of Materials Research
DOI:
10.1557/JMR.2001.0007
Date:
January, 2001
File:
PDF, 243 KB
english, 2001
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