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A new step in high-frequency EPR of defects in semiconductors
H. Blok, J.A.J.M. Disselhorst, S.B. Orlinskii, J. Schmidt, P.G. BaranovVolume:
340-342
Year:
2003
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2003.09.100
File:
PDF, 298 KB
english, 2003