Defects of the SiC/SiO2 interface: energetics of the...

Defects of the SiC/SiO2 interface: energetics of the elementary steps of the oxidation reaction

P. Deák, A. Gali, J. Knaup, Z. Hajnal, Th. Frauenheim, P. Ordejón, J.W. Choyke
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Volume:
340-342
Year:
2003
Language:
english
Pages:
5
DOI:
10.1016/j.physb.2003.09.252
File:
PDF, 209 KB
english, 2003
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