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GaAsN formation by implantation of nitrogen into GaAs studied by infrared spectroscopy
H.Ch. Alt, Y.V. Gomeniuk, G. Lenk, B. WiedemannVolume:
340-342
Year:
2003
Language:
english
Pages:
5
DOI:
10.1016/j.physb.2003.10.004
File:
PDF, 246 KB
english, 2003