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Effect of the Growth Conditions on the Properties of Nitrided Oxides Grown by RTP for 4H-SiC p-Channel MOSFETs Fabrication
Constant, A., Berthou, M., Florentin, M., Millán, J., Godignon, P.Volume:
159
Year:
2012
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/2.039205jes
File:
PDF, 385 KB
english, 2012