Effect of gate interface on performance degradation of irradiated SiC-MESFET
H. Ohyama, K. Takakura, M. Yoneoka, K. Uemura, M. Motoki, K. Matsuo, M. Arai, S. Kuboyama, E. Simoen, C. ClaeysVolume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.08.108
File:
PDF, 161 KB
english, 2007