Nitrogen-related point defect in 4H and 6H SiC

Physica B: Condensed Matter 2007 Vol. 401-402; Iss. none

Nitrogen-related point defect in 4H and 6H SiC

M.E. Zvanut, J. van Tol
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Volume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.08.116
File:
PDF, 182 KB
english, 2007
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