Behaviour of defects in semi-insulating 4H-SiC after...

Physica B: Condensed Matter 2007 Vol. 401-402; Iss. none

Behaviour of defects in semi-insulating 4H-SiC after ultra-high temperature anneal treatments

N.Y. Garces, E.R. Glaser, W.E. Carlos, M.A. Fanton
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Volume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.08.117
File:
PDF, 260 KB
english, 2007
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