Investigation of electrically active defects of silicon carbide using atomistic scale modeling and simulation
Aveek Chatterjee, Asha Bhat, Kevin MatochaVolume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.08.118
File:
PDF, 535 KB
english, 2007