Investigation of electrically active defects of silicon...

Investigation of electrically active defects of silicon carbide using atomistic scale modeling and simulation

Aveek Chatterjee, Asha Bhat, Kevin Matocha
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Volume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.08.118
File:
PDF, 535 KB
english, 2007
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