TCAD Modeling and Simulation of Sub-100nm Gate Length...

MRS Proceedings 2006 / 1 Vol. 913

TCAD Modeling and Simulation of Sub-100nm Gate Length Silicon and GaN based SOI MOSFETs

Ma, Lei, Jin, Yawei, Zeng, Chang, Dandu, Krishnanshu, Johnson, Mark, Barlage, Doug William
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Volume:
913
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-0913-D05-09
Date:
January, 2006
File:
PDF, 120 KB
english, 2006
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