A TEM study of in-grown stacking faults in 3C-SiC layers...

Physica B: Condensed Matter 2009 Vol. 404; Iss. 23-24

A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates

Maya Marinova, Frederic Mercier, Alkioni Mantzari, Irina Galben, Didier Chaussende, Efstathios K. Polychroniadis
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Volume:
404
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.physb.2009.08.190
File:
PDF, 299 KB
english, 2009
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