Electronic and annealing properties of the E0.31 defect...

Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

F.D. Auret, S.M.M. Coelho, G. Myburg, P.J. Janse van Rensburg, W.E. Meyer
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Volume:
404
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.physb.2009.09.028
File:
PDF, 199 KB
english, 2009
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