Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
F.D. Auret, S.M.M. Coelho, G. Myburg, P.J. Janse van Rensburg, W.E. MeyerVolume:
404
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.physb.2009.09.028
File:
PDF, 199 KB
english, 2009