Deep Levels in 4H Silicon Carbide Epilayers Induced by...

MRS Proceedings 2006 / 1 Vol. 911

Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2

Cavallini, Anna, Castaldini, Antonio, Nava, Filippo, Errani, Paolo, Cindro, Vladimir
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Volume:
911
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-0911-B06-01
Date:
January, 2006
File:
PDF, 1.51 MB
english, 2006
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