Strengths and Limitations of the Vacancy Engineering Approach for the Control of Dopant Diffusion and Activation in Silicon
Claverie, Alain, Cristiano, Fuccio, Gavelle, Mathieu, Sévérac, Fabrice, Cayrel, Frédéric, Alquier, Daniel, Lerch, Wilfried, Paul, Silke, Rubin, Leonard, Raineri, Vito, Giannazzo, Filippo, Jaouen, HervVolume:
1070
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1070-E01-02
Date:
January, 2008
File:
PDF, 1.06 MB
english, 2008