Interface Engineering for InGaAs n-MOSFET Application Using...

Journal of The Electrochemical Society 2010 Vol. 157; Iss. 11

Interface Engineering for InGaAs n-MOSFET Application Using Plasma PH[sub 3]–N[sub 2] Passivation

Oh, Hoon-Jung, Suleiman, Sumarlina Azzah Bte, Lee, Sungjoo
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Volume:
157
Year:
2010
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3489946
File:
PDF, 657 KB
english, 2010
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