Development of SiO2 Dielectric Thin Film Prepared by the...

MRS Proceedings 2009 / 1 Vol. 1196

Development of SiO2 Dielectric Thin Film Prepared by the Low-temperature Solution Process

Kodzasa, Takehito, Uemura, Sei, Suemori, Kouji, Yoshida, Manabu, Hoshino, Satoshi, Takada, Noriyuki, Kamata, Toshihide
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Volume:
1196
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1196-C04-04
Date:
January, 2009
File:
PDF, 639 KB
english, 2009
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