The effects of GaN capping layer thickness on...

Physica E: Low-dimensional Systems and Nanostructures 2005 Vol. 25; Iss. 4

The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures

A. Asgari, M. Kalafi, L. Faraone
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Volume:
25
Year:
2005
Language:
english
Pages:
7
DOI:
10.1016/j.physe.2004.07.002
File:
PDF, 251 KB
english, 2005
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