![](/img/cover-not-exists.png)
1.5 μm emission from InAs quantum dots with InGaAsSb strain-reducing layer grown on GaAs substrates
Kouichi Akahane, Naokatsu Yamamoto, Shin-ichiro Gozu, Akio Ueta, Naoki OhtaniVolume:
32
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.physe.2005.12.018
File:
PDF, 199 KB
english, 2006