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Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth
Shah, Jay M, Gessmann, Thomas, Luo, Hong, Xi, Yangang, Chen, Kaixuan, Kim, Jong Kyu, Schubert, E. FredVolume:
892
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-0892-FF13-10
Date:
January, 2005
File:
PDF, 476 KB
english, 2005