Single-electron transistor in strained Si/SiGe...

Physica E: Low-dimensional Systems and Nanostructures 2006 Vol. 34; Iss. 1-2

Single-electron transistor in strained Si/SiGe heterostructures

Thomas Berer, Dietmar Pachinger, Georg Pillwein, Michael Mühlberger, Herbert Lichtenberger, Gerhard Brunthaler, F. Schäffler
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Volume:
34
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.physe.2006.03.016
File:
PDF, 186 KB
english, 2006
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