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Single-electron transistor in strained Si/SiGe heterostructures
Thomas Berer, Dietmar Pachinger, Georg Pillwein, Michael Mühlberger, Herbert Lichtenberger, Gerhard Brunthaler, F. SchäfflerVolume:
34
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.physe.2006.03.016
File:
PDF, 186 KB
english, 2006