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[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives
Chevalier, P., Avenier, G., Ribes, G., Montagne, A., Canderle, E., Celi, D., Derrier, N., Deglise, C., Durand, C., Quemerais, T., Buczko, M., Gloria, D., Robin, O., Petitdidier, S., Campidelli, Y., AbYear:
2014
Language:
english
DOI:
10.1109/IEDM.2014.7046978
File:
PDF, 1.29 MB
english, 2014