Demonstration of AlGaN/GaN High Electron Mobility...

Japanese Journal of Applied Physics 2008 / 5 Vol. 47; Iss. 5

Demonstration of AlGaN/GaN High Electron Mobility Transistors on a -Plane (11\bar20) Sapphire

Selvaraj, Susai Lawrence, Egawa, Takashi
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.47.3332
Date:
May, 2008
File:
PDF, 442 KB
english, 2008
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