Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask
Li, Can Hua, Seiler, Joseph, Bhat, I., Chow, T.P.Volume:
457-460
Year:
2004
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.457-460.185
File:
PDF, 1.66 MB
english, 2004