Analysis of temperature dependence of Ge-on-Si p–i–n...

Analysis of temperature dependence of Ge-on-Si p–i–n photodetectors

M. Balbi, V. Sorianello, L. Colace, G. Assanto
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Volume:
41
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.physe.2008.08.015
File:
PDF, 307 KB
english, 2009
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