Numerical performance evaluation of AlGaN/GaN high electron mobility transistors including gate length effects
Z. Hashempour, A. Asgari, S. Nikipar, M. Abolhasani, M. KalafiVolume:
41
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.physe.2009.04.026
File:
PDF, 423 KB
english, 2009