![](/img/cover-not-exists.png)
Properties of A-(Si,Ge) Materials and Devices grown using Chemical Annealing
Shyam, Ashutosh, Congreve, Daniel, Noack, Max, Dalal, VikramVolume:
1321
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/opl.2011.1094
Date:
January, 2011
File:
PDF, 263 KB
english, 2011