Doping effect on photocarrier lifetime in InAs quantum dots...

Physica E: Low-dimensional Systems and Nanostructures 2010 Vol. 42; Iss. 10

Doping effect on photocarrier lifetime in InAs quantum dots with strain-relaxed InGaAs barriers grown by molecular beam epitaxy

Takahiro Kitada, Akari Mukaijo, Tomoya Takahashi, Takuya Mukai, Ken Morita, Toshiro Isu
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Volume:
42
Year:
2010
Language:
english
Pages:
4
DOI:
10.1016/j.physe.2009.11.015
File:
PDF, 439 KB
english, 2010
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