A Study of the Shallow Electron Traps at the 4H-SiC/SiO2...

Materials Science Forum 2003 Vol. 433-436

A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface

Ólafsson, H.Ö., Sveinbjörnsson, Einar Ö., Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N.
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Volume:
433-436
Year:
2003
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.433-436.547
File:
PDF, 230 KB
english, 2003
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