Device Breakdown and Dynamic effects in GaN Power Switching...

Device Breakdown and Dynamic effects in GaN Power Switching Devices: Dependencies on Material Properties and Device Design

Wurfl, J., Bahat-Treidel, E., Brunner, F., Cho, M., Hilt, O., Knauer, A., Kotara, P., Krueger, O., Weyers, M., Zhytnytska, R.
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Volume:
50
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/05003.0211ecst
Date:
March, 2013
File:
PDF, 752 KB
english, 2013
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