Improved Gate-Edge Profile of Metal/High-k Gate Stack Using...

Electrochemical and Solid-State Letters 2006 Vol. 9; Iss. 1

Improved Gate-Edge Profile of Metal/High-k Gate Stack Using an NH[sub 3] Ashing Process in Gate-First CMOSFETs

Song, S. C., Zhang, Z., Huffman, C., Bae, S. H, Sim, J. H., Lee, B. H.
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Volume:
9
Year:
2006
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.2131243
File:
PDF, 461 KB
english, 2006
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