6H-SiC Homoepitaxial Growth and Optical Property of Boron-...

Materials Science Forum 2006 Vol. 527-529

6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method

Kawai, Y., Maeda, Tomohiko, Nakamura, Yoshihiro, Sakurai, Yoji, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshimoto, Masahiro, Furusho, Tomoaki, Kinoshita, Hiroyuki, Shiomi, H
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Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.263
File:
PDF, 329 KB
english, 2006
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