Electron velocity overshoot in sub-100-nm channel length...

Electron velocity overshoot in sub-100-nm channel length metal–oxide–semiconductor field-effect transistors at 77 and 300 K

Shahidi, G. G.
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Volume:
6
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.584031
Date:
January, 1988
File:
PDF, 602 KB
english, 1988
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