Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
1988 / 1 Vol. 6; Iss. 1
Electron velocity overshoot in sub-100-nm channel length metal–oxide–semiconductor field-effect transistors at 77 and 300 K
Shahidi, G. G.Volume:
6
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.584031
Date:
January, 1988
File:
PDF, 602 KB
english, 1988