Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces
Swanson, Lukas K., Fiorenza, Patrick, Giannazzo, Filippo, Alessandrino, S., Lorenti, S., Roccaforte, FabrizioVolume:
740-742
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.740-742.715
Date:
January, 2013
File:
PDF, 499 KB
english, 2013