Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2014 / 05 Vol. 32; Iss. 3
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Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
Consiglio, Steven, Tapily, Kandabara, Clark, Robert D., Hasegawa, Toshio, Amano, Fumitaka, Leusink, Gert J., Jordan-Sweet, Jean, Vasić, Relja, Medikonda, Manasa, Diebold, Alain C.Volume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4869162
Date:
May, 2014
File:
PDF, 3.91 MB
english, 2014