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Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC
von Bardeleben, Hans Jürgen, Cantin, J.L., Shishkin, Y., Devaty, Robert P., Choyke, W.J.Volume:
457-460
Year:
2004
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.457-460.1457
File:
PDF, 509 KB
english, 2004