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The Influence of Gate Material, SiO2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors
Gutt, Tomasz, Malachowski, Tomasz, Przewłocki, Henryk M., Engström, Olof, Bakowski, Mietek, Esteve, RomainVolume:
711
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.711.109
Date:
January, 2012
File:
PDF, 294 KB
english, 2012