Effect of Shallow n-Doping on Field Effect Mobility in...

Materials Science Forum 2014 / 2 Vol. 778-780

Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors

Noll, Stefan, Rambach, Martin, Grieb, Michael, Scholten, Dick, Bauer, Anton J., Frey, Lothar
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.702
Date:
February, 2014
File:
PDF, 397 KB
english, 2014
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