Prolonged 500 °C Operation of 6H-SiC JFET Integrated...

Materials Science Forum 2009 Vol. 615-617

Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry

Neudeck, Philip G., Spry, David J., Chen, Liang Yu, Chang, Carl W., Beheim, Glenn M., Okojie, Robert S., Evans, Laura J., Meredith, Roger D., Ferrier, Terry L., Krasowski, Michael J., Prokop, Norman F
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Volume:
615-617
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.615-617.929
File:
PDF, 575 KB
english, 2009
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