20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure...

Japanese Journal of Applied Physics 2007 / 6 Vol. 46; Iss. No. 24

20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

Iwakami, Shinichi, Machida, Osamu, Yanagihara, Masataka, Ehara, Toshihiro, Kaneko, Nobuo, Goto, Hirokazu, Iwabuchi, Akio
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Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.L587
Date:
June, 2007
File:
PDF, 192 KB
english, 2007
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